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TLP2962F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLP2962F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 13 page ![]() TLP2962F 1 Photocouplers GaAℓAs Infrared LED & Photo IC TLP2962F TLP2962F TLP2962F TLP2962F Start of commercial production 2011-09 1. 1. 1. 1. Applications Applications Applications Applications • Factory Automation (FA) • High-Speed Digital Interfacing • Measuring Instruments 2. 2. 2. 2. General General General General The Toshiba TLP2962F consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. The TLP2962F guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is housed in the DIP8 package. The TLP2962F has an internal Faraday shield that provides a guaranteed common-mode transient immunity of ±20 kV/µs. The TLP2962F satisfies 8 mm PC board spacing requirements. Absolute maximum ratings and electrical characteristics are the same as in the TLP2962. 3. 3. 3. 3. Features Features Features Features (1) Inverter logic type (open collector output) (2) Package: DIP8 (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 15 MBd (typ.) (NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 4 mA (max) (8) Common-mode transient immunity: ±20 kV/µs (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) (Note 1) (Note 1) (Note 1) Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4) Option (D4) Option (D4) Option (D4). 2015-12-16 Rev.3.0 ©2015 Toshiba Corporation |
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