STGP20NC60V datasheet(4/20 Pages) STMICROELECTRONICS

4 / 20 page

Electrical characteristics

STGB20NC60V, STGP20NC60V, STGW20NC60V

4/20

DocID9982 Rev 6

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE=15 V, IC= 20 A

VGE=15 V, IC= 20 A,TC= 125 °C

1.8

1.7

2.5

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector-emitter cut-off

current (VGE = 0)

VCE = 600 V

VCE = 600 V, Tc=125 °C

µA

IGES

Gate-emitter cut-off

current (VCE = 0)

VGE = ±20 V

± 100

gfs

(1)

Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VCE = 15 V, IC= 20 A

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE=0

-2200

Coes

Output capacitance

225

Cres

Reverse transfer

capacitance

-50

Total gate charge

VCE = 390 V, IC = 20 A,

VGE = 15 V,

(see Figure 17)

-100

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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