Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

2SC4186 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SC4186
Description  SILICON TRANSISTOR
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4186 Datasheet(HTML) 3 Page - Renesas Technology Corp

  2SC4186 Datasheet HTML 1Page - Renesas Technology Corp 2SC4186 Datasheet HTML 2Page - Renesas Technology Corp 2SC4186 Datasheet HTML 3Page - Renesas Technology Corp 2SC4186 Datasheet HTML 4Page - Renesas Technology Corp 2SC4186 Datasheet HTML 5Page - Renesas Technology Corp 2SC4186 Datasheet HTML 6Page - Renesas Technology Corp 2SC4186 Datasheet HTML 7Page - Renesas Technology Corp 2SC4186 Datasheet HTML 8Page - Renesas Technology Corp 2SC4186 Datasheet HTML 9Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
©
1996
DATA SHEET
SILICON TRANSISTOR
2SC4186
DESCRIPTION
The 2SC4186 is an NPN silicon epitaxial transistor intended for use
as a UHF oscillator and a mixer in a tuner of a TV receiver. The device
features stable oscillation and small frequency drift against any change
of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recom-
mended for Hybrid Integrated Circuit and other applications.
FEATURES
•
High Gain Bandwidth Product
: fT = 4.0 GHz.
•
Low Collector to Base Time Constant : CC · rb’b = 4.0 ps TYP.
•
Low Output Capacitance
: Cob = 1.5 pF MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCB0
25
V
Collector to Emitter Voltage
VCE0
12
V
Emitter to Base Voltage
VEB0
3.0
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
160
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
ICB0
0.1
µAVCB = 15 V, IE = 0
DC Current Gain
hFE
40
100
200
VCE = 10 V, IC = 5 mA
Collector Saturation Voltage
VCE(sat)
0.09
0.5
V
IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product
fT
2.5
4.0
GHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Output Capacitance
Cob
1.0
1.8
pF
VCB = 10 V, IE = 0, f = 1 MHz
Collector to Base Time Constant
Cc · rb’b
5.0
ps
VCE = 10 V, IE = –5 mA, f = 31.9 MHz
hFE Classifications
Rank
T62
T63
T64
Marking
T62
T63
T64
hFE
40 to 80
60 to 120
100 to 200
Document No. P11191EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
UHF OSCILLATOR AND UHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector



Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com