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STM32U545NET3QTR Datasheet(PDF) 138 Page - STMicroelectronics |
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STM32U545NET3QTR Datasheet(HTML) 138 Page - STMicroelectronics |
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138 / 283 page ![]() Electrical characteristics STM32U545xx 138/283 DS14216 Rev 1 VBOR0 Brownout reset threshold 0 Rising edge 1.6 1.66 1.71 V Falling edge, range 1, 2, 3 1.58 1.64 1.69 Falling edge, range 4 and low-power modes 1.58 1.64 1.69 VBOR1 Brownout reset threshold 1 Rising edge 1.98 2.08 2.17 Falling edge 1.9 2.00 2.1 VBOR2 Brownout reset threshold 2 Rising edge 2.18 2.29 2.39 Falling edge 2.08 2.18 2.25 VBOR3 Brownout reset threshold 3 Rising edge 2.48 2.59 2.7 Falling edge 2.39 2.5 2.61 VBOR4 Brownout reset threshold 4 Rising edge 2.76 2.88 3.0 Falling edge 2.67 2.79 2.9 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.03 2.13 2.23 Falling edge 1.93 2.03 2.12 VPVD1 PVD threshold 1 Rising edge 2.18 2.29 2.39 Falling edge 2.08 2.18 2.28 VPVD2 PVD threshold 2 Rising edge 2.33 2.44 2.55 Falling edge 2.23 2.34 2.44 VPVD3 PVD threshold 3 Rising edge 2.47 2.59 2.7 Falling edge 2.39 2.50 2.61 VPVD4 PVD threshold 4 Rising edge 2.6 2.72 2.83 Falling edge 2.5 2.62 2.73 VPVD5 PVD threshold 5 Rising edge 2.76 2.88 3.0 Falling edge 2.66 2.78 2.9 VPVD6 PVD threshold 6 Rising edge 2.83 2.96 3.08 Falling edge 2.76 2.88 3.0 Vhyst_BOR0 Hysteresis voltage of BOR0 - - 20 - mV Vhyst_BOR_PVD Hysteresis voltage of BOR (except BOR0) and PVD -- 80 - tBOR0_sampling BOR0 sampling period ULPMEN = 1 - 30 55 ms IDD_BOR0(2) Additional BOR0 consumption if ULPMEN = 0 versus ULPMEN = 1 Standby mode - 60 - nA IDD_BOR_PVD(2) BOR(3) (except BOR0) and PVD consumption from VDD(4) -- 1 1.5 µA VBOR_VBAT VBAT brownout reset threshold - 1.58 - 1.65 V Table 35. Embedded reset and power control block characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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