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STM32G0C1NET3 Datasheet(PDF) 77 Page - STMicroelectronics |
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STM32G0C1NET3 Datasheet(HTML) 77 Page - STMicroelectronics |
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77 / 159 page ![]() DS13564 Rev 4 77/159 STM32G0C1xC/xE Electrical characteristics 124 ∆IDD(SRAM) Extra supply current to retain SRAM content(3) SRAM retention enabled 1.8 V 1.0 11.5 57 4.3 41 265 µA 2.4 V 1.0 11.5 57 4.3 41 265 3.0 V 1.1 11.6 58 4.4 41 270 3.6 V 1.2 11.6 59 4.4 42 270 1. Based on characterization results, not tested in production. 2. Without SRAM retention and with ULPEN bit set 3. To be added to IDD(Standby) as appropriate Table 33. Current consumption in Standby mode (continued) Symbol Parameter Conditions Typ Max(1) Unit General VDD 25°C 85°C 125°C 25°C 85°C 130°C Table 34. Current consumption in Shutdown mode Symbol Parameter Conditions Typ Max(1) Unit RTC VDD 25 °C 85 °C 125 °C 25 °C 85 °C 130 °C IDD(Shutdown) Supply current in Shutdown mode Disabled 1.8 V 23 840 7050 240 3210 39200 nA 2.4 V 38 965 8050 370 3910 44600 3.0 V 38 1100 9550 370 4700 51500 3.6 V 57 1350 11000 500 5700 59400 Enabled, clocked by LSE bypass at 32.768 kHz 1.8 V 235 1050 7400 290 3850 47000 2.4 V 320 1250 8400 440 4690 53500 3.0 V 425 1500 9950 450 5640 61800 3.6 V 550 1850 11500 590 6840 71200 1. Based on characterization results, not tested in production. Table 35. Current consumption in VBAT mode Symbol Parameter Conditions Typ Unit RTC VDD 25°C 85°C 125°C IDD(VBAT) Supply current in VBAT mode Enabled, clocked by LSE bypass at 32.768 kHz 1.8 V 195 416 2015 nA 2.4 V 320 530 2366 3.0 V 492 635 2838 3.6 V 627 908 3339 Enabled, clocked by LSE crystal at 32.768 kHz 1.8 V 130 325 1550 2.4 V 160 400 1800 3.0 V 210 500 2050 3.6 V 285 605 2400 Disabled 1.8 V 4 160 1450 2.4 V 4 190 1700 3.0 V 4 220 1950 3.6 V 7 270 2250 |
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