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STM32G0C1NET3 Datasheet(PDF) 82 Page - STMicroelectronics |
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STM32G0C1NET3 Datasheet(HTML) 82 Page - STMicroelectronics |
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82 / 159 page ![]() Electrical characteristics STM32G0C1xC/xE 82/159 DS13564 Rev 4 5.3.7 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 5.3.14. See Figure 18 for recommended clock input waveform. tWUSHDN Wakeup time from Shutdown mode Transiting to Run mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 258 340 µs tWULPRUN Wakeup time from Low-power run mode(2) Transiting to Run mode; HSISYS = HSI16/8 = 2 MHz 57 µs 1. Based on characterization results, not tested in production. 2. Time until REGLPF flag is cleared in PWR_SR2. Table 37. Low-power mode wakeup times(1) (continued) Symbol Parameter Conditions Typ Max Unit Table 38. Regulator mode transition times(1) Symbol Parameter Conditions Typ Max Unit tVOST Transition times between regulator Range 1 and Range 2(2) HSISYS = HSI16 20 40 µs 1. Based on characterization results, not tested in production. 2. Time until VOSF flag is cleared in PWR_SR2. Table 39. Wakeup time using LPUART(1) Symbol Parameter Conditions Typ Max Unit tWULPUART Wakeup time needed to calculate the maximum LPUART baud rate allowing to wakeup up from Stop mode when LPUART clock source is HSI16 Stop mode 0 - 1.7 µs Stop mode 1 - 8.5 1. Guaranteed by design. Table 40. High-speed external user clock characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSE_ext User external clock source frequency Voltage scaling Range 1 -8 48 MHz Voltage scaling Range 2 -8 26 VHSEH OSC_IN input pin high level voltage - 0.7 VDDIO1 -VDDIO1 V VHSEL OSC_IN input pin low level voltage - VSS -0.3 VDDIO1 |
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