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SGT65R65AL Datasheet(PDF) 7 Page - STMicroelectronics

Part # SGT65R65AL
Description  650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SGT65R65AL Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Typical drain-source on-resistance (TC = 25 °C)
GADG100220231650RID
65
60
55
50
45
40
0
10
20
30
40
50
60
RDS(on)
(mΩ)
ID (A)
VGS = 5 V
VGS = 6 V
Figure 14. Typical drain-source on-resistance
(TC = 150 °C)
GADG100220231652RID150
160
150
140
130
120
110
100
0
5
10
15
20
25
30
35
RDS(on)
(mΩ)
ID (A)
VGS = 5 V
VGS = 6 V
Figure 15. Typical reverse conduction characteristics
(TC = 25 °C)
GADG100220231659RCC25
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
ISD
(A)
VSD (V)
VGS = 6 V
VGS = 0 V
VGS = -3 V
Figure 16. Typical reverse conduction characteristics
(TC = 150 °C)
GADG100220231700RCC150
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
ISD
(A)
VSD (V)
VGS = 6 V
VGS = 0 V
VGS = -3 V
Figure 17. Normalized gate threshold vs temperature
GADG100220231707VTH
1.2
1.1
1.0
0.9
0.8
0.7
-75
-25
25
75
125
VGS(th)
(norm.)
TC (°C)
ID = 2.3 mA
VDS = 0.01 V
SGT65R65AL
Electrical characteristics (curves)
DS13251 - Rev 7
page 7/17



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