SGT65R65AL datasheet(4/17 Pages) STMICROELECTRONICS

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Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDS = 400 V, ID = 15 A, VGS = 0 to 6 V,

RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH

(see Figure 20. Test circuit for

inductive load switching times and

Figure 21. Switching time waveforms)

4.5

Fall time

5.6

td(off)

Turn-off delay time

9.8

Rise time

10.9

td(on)

Turn-on delay time

VDS = 400 V, ID = 15 A, VGS = 0 to 6 V,

RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH,

TC =150 °C

(see Figure 20. Test circuit for

inductive load switching times and

Figure 21. Switching time waveforms)

5.2

Fall time

5.3

td(off)

Turn-off delay time

Rise time

12.5

Eon

Turn-on switching energy

VDS = 400 V, ID = 15 A, VGS = 0 to 6 V,

RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH

33.8

µJ

Eoff

Turn-off switching energy

19.5

µJ

Table 6. Reverse conduction

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

Source-drain reverse voltage

VGS = 0 V, ISD = 15 A

3.3

SGT65R65AL

Electrical characteristics

DS13251 - Rev 7

page 4/17

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