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VB1102M Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # VB1102M
Description  N-Channel 100 V (D-S) MOSFET
PDF  9 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VB1102M Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
0.0
0.3
0.6
0.9
1.2
V
SD - Source-to-Drain Voltage (V)
T
J = 150 °C
T
J = 25 °C
1.6
1.9
2.2
2.5
2.8
- 50
- 25
0
25
50
75
100
125
150
T
J -Temperature (°C)
I
D = 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.15
0.2
0.3
0.
4
2468
10
V
GS - Gate-to-Source Voltage (V)
T
J = 125 °C
T = 25
°C
I
D = 1.5 A
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
Time (s)
TA = 25 °C
Safe Operating Area
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
100 μs
100 ms
Limited by RDS(on)*
1 ms
T
A = 25 °C
Single Pulse
BVDSS Limited
10 ms
1 s, 10 s
DC
VB1102M
www.VBsemi.com
服务热线：400-655-8788



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