2

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VDS = 0 V, ID = 250 µA

100

V

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

105

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 5.2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.2

2.8

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

- 1

µA

VDS = 100 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 4.5 V

5A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 1.5 A



VGS = 6 V, ID = 1 A

VGS = 4.5 V, ID = 0.5 A

0.

0

Forward Transconductancea

gfs

VDS = 20 V, ID = 1.5 A

2.0

S

Dynamicb

Input Capacitance

Ciss

VDS = 50 V, VGS = 0 V, f = 1 MHz

190

pF

Output Capacitance

Coss

22

Reverse Transfer Capacitance

Crss

13

Total Gate Charge

Qg

VDS = 50 V, VGS = 10 V, ID = 1.6 A

5.2

10.4

nC

VDS = 50 V, VGS = 4.5 V, ID = 1.6 A

2.9

5.8

Gate-Source Charge

Qgs

0.75

Gate-Drain Charge

Qgd

1.4

Gate Resistance

Rg

f = 1 MHz

0.3

1.4

2.8



Turn-On Delay Time

td(on)

VDD = 50 V, RL = 39 

ID = 1.3 A, VGEN = 4.5 V, Rg = 1 

30

45

ns

Rise Time

tr

26

39

Turn-Off Delay Time

td(off)

17

26

Fall Time

tf

12

20

Turn-On Delay Time

td(on)

VDD = 50 V, RL = 39 

ID = 1.3 A, VGEN = 10 V, Rg = 1 

612

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

10

20

Fall Time

tf

612

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 2.1

A

Pulse Diode Forward Currenta

ISM

- 20

Body Diode Voltage

VSD

IS = 1.3 A

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C

22

33

ns

Body Diode Reverse Recovery Charge

Qrr

21

32

nC

Reverse Recovery Fall Time

ta

16

ns

Reverse Recovery Rise Time

tb

6

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