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VB1102M Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part # VB1102M
Description  N-Channel 100 V (D-S) MOSFET
PDF  9 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VB1102M Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
1
2
3
4
5
00.5
11.5
2
V
DS - Drain-to-Source Voltage (V)
V
GS = 10 V thru 5 V
V
GS = 3 V
V
GS = 4.5V
0.1
0.200
0.
0.300
012345
I
D - Drain Current (A)
V
GS = 6 V
V
GS = 4.5 V
V
GS = 10 V
0
2
4
6
8
10
0
1.5
3
4.5
6
Q
g - Total Gate Charge (nC)
V
DS = 80 V
V
DS = 25 V
V
DS = 50 V
I
D = 1.6 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
0.6
1.2
1.8
2.4
3
01234
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = - 55 °C
T
C = 125 °C
0
60
120
180
240
300
0
20406080
100
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.4
0.85
1.3
1.75
2.2
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
I
D = 1.5 A
V
GS = 6 V
V
GS = 10 V
VB1102M
www.VBsemi.com
50
250
0.350
服务热线：400-655-8788



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