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CYT4DNJBJS Datasheet(PDF) 179 Page - Infineon Technologies AG

Part # CYT4DNJBJS
Description  TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual
PDF  209 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

CYT4DNJBJS Datasheet(HTML) 179 Page - Infineon Technologies AG

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Datasheet
179
002-24601 Rev. *I
2023-02-14
TRAVEO™ T2G 32-bit Automotive MCU
Based on Arm® Cortex®-M7 dual
Electrical specifications
Figure 26-6
SDR write and read timing diagram
Figure 26-7
DDR write and read timing diagram
Note
88.For other frequencies: tOSU = (13/16 × tDLL) – 0.3 ns, tDLL is the clock period of the input clock of the DLL.
89.For other frequencies: tOH = (13/16 × tDLL) – 0.3 ns, tDLL is the clock period of the input clock of the DLL.
90.For tOH timing between 80 MHz and 100 MHz, use following formula: tOH = 2.8 - 0.015 × fCK, where fCK is the memory clock frequency
in MHz, and tOH is hold time in ns.
1: CS# active setup to CK = tCSS
2: Data setup time = tISU*
3: Data hold time = tIH*
4: CK low to DQ[7:0] input valid time = tIN_V
5: Read data valid time of DQ[7:0] = tRDV
6: Output setup of DQ[7:0] to CK rise = tOSU
7: Output hold time of DQ[7:0] from CK rise = tOH
8: CS# active hold to CK = tCSH
9: CS# inactive to output disable = tDIS
10: Chip select HIGH time = tCS
*Note: Reference is CK falling edge for the pos capture mode
CK
Chip
select
Data
LSB OUT
1
MSB OUT
8
9
Read timing
Write timing
6
7
10
4
MSB IN
LSB IN
23
5
CK
Chip
select
Data
MSB IN
LSB IN
1
MSB IN
LSB IN
7
4
5
4
8
1: CS# active setup to CK = tCSS
2: CK edge to DQ[7:0] input valid time = tIN_V
3: Read data valid time of DQ[7:0] = tRDV
4: Output setup of DQ[7:0] to CK edge = tOSU
5 Output hold time of DQ[7:0] from CK edge = tOH
6: CS# active hold to CK = tCSH
7: Chip select HIGH time = tCS
8: CS# inactive to output disable = tDIS
3
Read timing
Write timing
5
2
2



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