| Electronic Components Datasheet Search |
|
ADT7482ARMZ Datasheet(PDF) 22 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
ADT7482ARMZ Datasheet(HTML) 22 Page - Analog Devices |
|
22 / 24 page ![]() ADT7482 Rev. 0 | Page 22 of 24 APPLICATIONS INFORMATION NOISE FILTERING For temperature sensors operating in noisy environments, the previous practice was to place a capacitor across the D+ pin and the D− pins to help combat the effects of noise. However, large capacitances affect the accuracy of the temperature measurement, leading to a recommended maximum capacitor value of 1000 pF. While this capacitor reduces the noise, it does not eliminate it, making it difficult to use the sensor in a very noisy environment. The ADT7482 has a major advantage over other devices for eliminating the effects of noise on the external sensor. The series resistance cancellation feature allows a filter to be constructed between the external temperature sensor and the part. The effect of any filter resistance seen in series with the remote sensor is automatically cancelled from the temperature result. The construction of a filter allows the ADT7482 and the remote temperature sensor to operate in noisy environments. Figure 23 shows a low-pass R-C-R filter, with the following values: R = 100 Ω and C = 1 nF This filtering reduces both common-mode noise and differential noise. D+ 1nF 100 Ω REMOTE TEMPERATURE SENSOR D– 100 Ω Figure 23. Filter Between Remote Sensor and ADT7482 FACTORS AFFECTING DIODE ACCURACY Remote Sensing Diode The ADT7482 is designed to work with substrate transistors built into processors or with discrete transistors. Substrate transistors are generally PNP types with the collector connected to the substrate. Discrete types can be either PNP or NPN transistors connected as a diode (base shorted to collector). If an NPN transistor is used, the collector and base are connected to D+ and the emitter to D−. If a PNP transistor is used, the collector and base are connected to D− and the emitter to D+. To reduce the error due to variations in both substrate and discrete transistors, a number of factors should be taken into consideration: • The ideality factor, nf, of the transistor is a measure of the deviation of the thermal diode from ideal behavior. The ADT7482 is trimmed for an nf value of 1.008. The following equation can be used to calculate the error introduced at a temperature T (°C), when using a transistor whose nf does not equal 1.008. Consult the processor data sheet for the nf values. ( ) ( ) T Kelvin n T f + × = Δ 15 . 273 008 . 1 / 008 . 1 – To factor this in, write the ΔT value to the offset register. It is then automatically added to or subtracted from the temperature measurement by the ADT7482. • Some CPU manufacturers specify the high and low current levels of the substrate transistors. The high current level of the ADT7482, IHIGH, is 220 μA and the low level current, ILOW, is 13.5 μA. If the ADT7482 current levels do not match the current levels specified by the CPU manufacturer, it may be necessary to remove an offset. The CPU data sheet advises whether this offset needs to be removed and how to calculate it. This offset can be programmed to the offset register. It is important to note that if more than one offset must be considered, the algebraic sum of these offsets must be programmed to the offset register. If a discrete transistor is being used with the ADT7482, the best accuracy is obtained by choosing devices according to the following criteria: • Base-emitter voltage greater than 0.25 V at 6 μA, at the highest operating temperature. • Base-emitter voltage less than 0.95 V at 100 μA, at the lowest operating temperature. • Base resistance less than 100 Ω. • Small variation in hFE (such as 50 to 150) that indicates tight control of VBE characteristics. Transistors, such as 2N3904, 2N3906, or equivalents in SOT-23 packages, are suitable devices to use. THERMAL INERTIA AND SELF-HEATING Accuracy depends on the temperature of the remote sensing diode and/or the local temperature sensor being at the same temperature as that being measured. A number of factors can affect this. Ideally, the sensor should be in good thermal contact with the part of the system being measured. If it is not, the thermal inertia caused by the sensor’s mass causes a lag in the response of the sensor to a temperature change. In the case of the remote sensor, this should not be a problem, since it is either a substrate transistor in the processor or a small package device, such as SOT-23, placed in close proximity to it. The on-chip sensor, however, is often remote from the processor and only monitors the general ambient temperature around the package. In practice, the ADT7482 package is in electrical, and hence thermal, contact with a PCB and may also be in a forced airflow. How accurately the temperature of the board and/or the forced airflow reflects the temperature to be measured also affects the accuracy. Self-heating due to the power dissipated in the ADT7482 or the remote sensor causes the chip temperature of the device or remote sensor to rise |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |