DMT616MLSS

Document number: DS41501 Rev. 2 - 2

4 of 7

www.diodes.com

March 2019

© Diodes Incorporated

DMT616MLSS

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0.022

0.024

0.026

0.028

-50

-25

0

25

50

75

100 125 150 175

V

= 10V

GS

I = 8.5A

D

V

= 4.5V

GS

I = 6A

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100 125 150 175

I = 250µA

D

I = 1mA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

0

5

10

15

20

0

0.3

0.6

0.9

1.2

1.5

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

2

4

6

8

10

0

2

4

6

8

10

12

14

16

V

= 30V

DS

I = 10A

D

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate Charge

1

10

100

1000

10000

0

10

20

30

40

50

60

Ciss

C oss

Crss

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

f=1MHz

0.01

0.1

1

10

100

0.1

1

10

100

P

= 100µs

W

P

= 1ms

W

P

= 10ms

W

P

= 100ms

W

P

= 1s

W

P

= 10s

W

DC

V

= 10V

GS

Single Pulse

DUT on 1*MRP Board

TJ(max) = 150°C

TC = 25°C

R DS(on)

Limited

-V

DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

Figure 8 Gate Threshold Variation vs. Junction Temperature

VDS, DRAIN-SOURCE VOLTAGE (V)