BLF545 datasheet(6/12 Pages) PHILIPS

6 / 12 page

October 1992

Philips Semiconductors

Product speciﬁcation

UHF push-pull power MOS transistor

BLF545

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; Rth mb-h = 0.25 K/W, unless otherwise speciﬁed.

RF performance in a common source, class-B, push-pull circuit.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

CW, class-B

500

× 40

> 11

typ. 13

> 50

typ. 60

Ruggedness in class-B operation

The BLF545 is capable of withstanding a full load

mismatch corresponding to VSWR = 50 through all phases

under the following conditions:

VDS = 28 V; f = 500 MHz at rated output power.

Fig.9

Power gain and efficiency as functions of

load power, typical values per section.

Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA;

ZL = 4.2 + j6.2 Ω (per section); f = 500 MHz.

handbook, halfpage

060

(dB)

MBK464

PL (W)

ηD

(%)

Fig.10 Load power as a function of input power,

typical values per section.

Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA;

ZL = 4.2 + j6.2 Ω (per section); f = 500 MHz.

handbook, halfpage

(W)

PIN (W)

MBK465

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