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NCE60P07AS Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE60P07AS Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 7 page ![]() Wuxi NCE Power Co., Ltd Page v1.0 2 NCE60P07AS http://www.ncepower.com Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -1.5 -2.0 V VGS=-10V, ID=-7A - 55 65 mΩ Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-7A - 65 85 mΩ Forward Transconductance gFS VDS=-5V,ID=-7A - 15 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1108 - PF Output Capacitance Coss - 73.7 - PF Reverse Transfer Capacitance Crss VDS=-30V,VGS=0V, F=1.0MHz - 58.2 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 8 - nS Turn-on Rise Time tr - 4 - nS Turn-Off Delay Time td(off) - 32 - nS Turn-Off Fall Time tf VDD=-30V, RL=4.2Ω, VGS=-10V,RG=3Ω - 7 - nS Total Gate Charge Qg - 23.4 - nC Gate-Source Charge Qgs - 4.1 - nC Gate-Drain Charge Qgd VDS=-30,ID=-7A, VGS=-10V - 4.8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-7A - -1.2 V Diode Forward Current (Note 2) IS - - -7 A Reverse Recovery Time trr - 25 nS Reverse Recovery Charge Qrr TJ = 25°C, IF =- 7A di/dt = -100A/μs (Note3) - 31 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production |
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