C6D08065Q

2

Rev. 0, December 2021

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The information in this document is subject to change without notice.

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Electrical Characteristics

Parameter

Symbol

Typ.

Max.

Unit

Test Conditions

Notes

Forward Voltage

V

F

1.27

1.5

V

I

F = 8 A, Tj = 25 °C

Fig. 1

1.37

1.6

I

F = 8 A, Tj = 175 °C

Reverse Current

I

R

2

20

µ

A

V

R = 650 V, Tj = 25 °C

Fig. 2

15

200

V

R = 650 V, Tj = 175 °C

Total Capacitive Charge

Q

C

29

nC

V

R = 400 V, Tj = 25 °C

Fig. 5

Total Capacitance

C

518

pF

V

R = 0 V, Tj = 25 °C, f = 1 MHz

Fig. 6

56

V

R = 200 V, Tj = 25 °C, f = 1 MHz

45

V

R = 400 V, Tj = 25 °C, f = 1 MHz

Capacitance Stored Energy

E

c

4.4

µ

J

V

R = 400 V

Fig. 7

Notes:

SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge.

Thermal & Mechanical Characteristics

Parameter

Symbol

Value

Unit

Notes

Thermal Resistance, Junction to Case (Typ.)

R

θ

, JC

1.8

°C / W

Junction Temperature

T

j

-55 to +175

°C

Case & Storage Temperature

T

c

-55 to +150

Maximum Processing Temperature

T

PROC

325

10 min max.

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Notes

Human Body Model

HBM

Class 3B (

Class 3B (≥≥ 8000 V)

8000 V)

Charge Device Model

CDM

Class C3 (

Class C3 (≥≥ 1000 V)

1000 V)