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2SC5976 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC5976 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC5976 2004-07-01 4 rth – tw Pulse width tw (s) 1000 1 0.001 1000 0.01 0.1 1 10 100 10 100 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. 1 ms* 10 ms* 100 µs* IC max (Pulsed)* DC operation Ta = 25°C IC max (Continuous)* 10 s* 100 ms* Collector −emitter voltage VCE (V) Safe operating area 0.01 0.1 0.1 1 10 1 10 100 10 µs* |
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