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2SC5976 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SC5976
Description  Transistor Silicon NPN Epitaxial Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5976 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC5976
2004-07-01
3
VBE (sat) – IC
0.001
10
10
100
1000
0.01
0.1
Ta
= 100°C
−55°C
25°C
0.001
0.1
10
10
1
0.01
0.1
Ta
= −55°C
100°C
25°C
0.001
0.01
10
1
0.1
0.01
0.1
Ta
= 100°C
−55°C
25°C
0
0
1.2
3.0
−55°C
Ta
= 100°C
25°C
Collector
−emitter voltage VCE
(V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
Base
−emitter saturation voltage VBE (V)
IC – VBE
0
0
0.8
2.0
2.4
1.0
2.5
3.0
Common emitter
Ta
= 25°C
Single nonrepetitive pulse
4
IB = 2 mA
20
10
6
2.0
1.6
0.4
2.5
1.5
0.8
0.2
0.4
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Common emitter
β
= 30
Single nonrepetitive pulse
Common emitter
β
= 30
Single nonrepetitive pulse
Common emitter
VCE = 2 V
Single nonrepetitive pulse
15
8
1
1
1
Ambient temperature Ta (°C)
Pc – Ta
0.2
0.8
0
160
20
80
100
0
40
120
60
140
0.4
0.6
DC Operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
2)
1.5
0.5
1.2
2.0
0.5
1.0
0.6
1.0



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