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2SC5976 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5976 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page ![]() 2SC5976 2004-07-01 3 VBE (sat) – IC 0.001 10 10 100 1000 0.01 0.1 Ta = 100°C −55°C 25°C 0.001 0.1 10 10 1 0.01 0.1 Ta = −55°C 100°C 25°C 0.001 0.01 10 1 0.1 0.01 0.1 Ta = 100°C −55°C 25°C 0 0 1.2 3.0 −55°C Ta = 100°C 25°C Collector −emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) Base −emitter saturation voltage VBE (V) IC – VBE 0 0 0.8 2.0 2.4 1.0 2.5 3.0 Common emitter Ta = 25°C Single nonrepetitive pulse 4 IB = 2 mA 20 10 6 2.0 1.6 0.4 2.5 1.5 0.8 0.2 0.4 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter β = 30 Single nonrepetitive pulse Common emitter β = 30 Single nonrepetitive pulse Common emitter VCE = 2 V Single nonrepetitive pulse 15 8 1 1 1 Ambient temperature Ta (°C) Pc – Ta 0.2 0.8 0 160 20 80 100 0 40 120 60 140 0.4 0.6 DC Operation Ta = 25°C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) 1.5 0.5 1.2 2.0 0.5 1.0 0.6 1.0 |
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