2SC5976

2004-07-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5976

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Flash Applications

= 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Collector-emitter voltage

30

V

Emitter-base voltage

6

V

DC

3.0

Collector current

Pulse

5.0

A

Base current

0.3

A

Collector power dissipation (t=10s)

1.00

Total collector power dissipation (DC)

0.625

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2－3S1A

1.6-0.1

2.8-0.3

3

2

1

+0.2

+0.2

1.Base

2.Emitter

3.Collector