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B2D08065KS Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR |
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B2D08065KS Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR |
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2 / 7 page ![]() Rev. 0.1 www.basicsemi.com 2 / 7 Maximum Ratings (TC=25℃ unless otherwise specified) SiC Schottky Diode B2D08065KS Symbol Parameter Test conditions Value Unit VRRM Repetitive peak reverse voltage 650 V VRSM Non-repetitive peak reverse voltage 650 V IF Continuous forward current TC=25°C TC=150°C 26 8 A IFSM Non-Repetitive forward surge current TC=25°C , tp=10ms, Half Sine Wave 64 A ∫i2dt i2t value TC=25°C ,tp=10ms 20.48 A2S Ptot Power dissipation TC=25°C TC=110°C 86 37 W Tj Operating junction temperature - 55~175 °C Tstg Storage temperature - 55~175 °C TO-220 mounting torque M3 Screw 0.7 Nm Thermal Characteristics Symbol Parameter Value Unit Min. Typ. Max. Rth(jc) Thermal resistance from junction to case 1.73 K/W |
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