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B2D08065KS Datasheet(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B2D08065KS Datasheet(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() Rev. 0.1 www.basicsemi.com 1 / 7 SiC Schottky Diode VRRM = 650 V IF (TC=150°C) = 8 A QC = 24 nC Features ⚫ Ceramic package provides 2.5kV isolation ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge B2D08065KS Benefits ⚫ Electrically isolated package ⚫ Essentially no switching losses ⚫ System efficiency improvement over Si diodes ⚫ Increased power density ⚫ Enabling higher switching frequency ⚫ Reduction of heat sink requirements ⚫ System cost savings due to smaller magnetics ⚫ Reduced EMI Applications ⚫ Switch mode power supplies (SMPS) ⚫ Uninterruptible power supplies ⚫ Motor drivers ⚫ Power factor correction ⚫ Pin1- Cathode ⚫ Pin2- Anode Package Pin Definitions Package Parameters Part Number Marking Package B2D08065KS B2D08065KS TO-220-isolated 1 2 TO-220-isolated 2 1 |
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