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B2D08065KS Datasheet(PDF) 5 Page - BASIC SEMICONDUCTOR |
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B2D08065KS Datasheet(HTML) 5 Page - BASIC SEMICONDUCTOR |
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5 / 7 page ![]() Rev. 0.1 www.basicsemi.com 5 / 7 e Figure 5. Typical reverse charge as function of reverse voltage Figure 6. Power dissipation as function of case temperature SiC Schottky Diode B2D08065KS Figure 7.Capacitance stored energy Typical Performance Figure 8. Max. transient thermal impedance, Zthjc= f(t ), parameter: D =t /T 0 100 200 300 400 500 600 700 800 0 3 6 9 12 15 V R (V) 25 50 75 100 125 150 175 0 20 40 60 80 100 T C (℃) 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 t p (s) D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0 100 200 300 400 500 600 700 800 0 10 20 30 40 V R (V) |
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