©2006 SST Communications Corp.

S71283-01-000

3/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•

High Gain:

– Typically 28 dB gain across 2.4– 2.5 GHz over

temperatures 0– 85

•

High linear output power:

– >24 dBm P1dB

•

High power-added efficiency/low operating cur-

rent for Bluetooth applications

– ~50% PAE or 115 mA total current consumption

3.0V

•

Low idle current

•

Simple input/output matching

•

Packages available

APPLICATIONS:

•

Bluetooth

•

USB Dongles

•

2.4 GHz Cordless phones

PRODUCT DESCRIPTION

The SST12LP00 is a high-power and high-gain power

amplifier based on the highly reliable InGaP/GaAs

HBT technology. SST12LP00 is easily configured for

high-power and high-efficiency applications while

operating over the 2.4- 2.5 GHz frequency band. This

device typically provides 30 dB gain with better than

The SST12LP00’s excellent linearity is well suited for

Class 1 Bluetooth operation. The power amplifier IC

also features easy board-level usage along with high

speed power up/down control. A low reference current

makes SST12LP00 ideal for the final stage power

amplification in battery-powered Bluetooth, USB Don-

gle, or cordless phone transmitter applications.

The SST12LP00 is offered in both 6-contact VQFN

and UQFN packages. See Figure 2 for pin assign-

ments and Table 1 for pin descriptions.

2.4-2.5 GHz Power Amplifier

SST12LP00

SST12LP002.4 GHz Power Amplifier