MRF9200LR3 MRF9200LSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applica-

tions in 26 volt base station equipment.

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.

Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 17.5 dB

Drain Efficiency — 25%

ACPR @ 750 kHz Offset — -46.5 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Derate above 25°C

625

3.6

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 60°C, 200 W CW

Case Temperature 80°C, 40 W CW

0.28

0.34

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF9200L

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

MRF9200LR3

MRF9200LSR3

880 MHz, 40 W AVG., 26 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465C-02, STYLE 1

NI-880S

MRF9200LSR3

CASE 465B-03, STYLE 1

NI-880

MRF9200LR3

© Freescale Semiconductor, Inc., 2006. All rights reserved.