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M25PE40VMP6P Datasheet(PDF) 48 Page - STMicroelectronics

Part # M25PE40VMP6P
Description  4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
PDF  60 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M25PE40VMP6P Datasheet(HTML) 48 Page - STMicroelectronics

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DC and AC parameters
M25PE40
48/60
M
Table 18.
AC characteristics (25 MHz operation)
Test conditions specified in Table 14 and Table 15
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock Frequency for the following instructions:
FAST_READ, PW, PP, PE, SE, DP, RDP,
WREN, WRDI, RDSR
D.C.
25
MHz
fR
Clock Frequency for READ instructions
D.C.
20
MHz
tCH
(1)
tCLH
Clock High Time
18
ns
tCL
(1)
tCLL
Clock Low Time
18
ns
Clock Slew Rate 2 (peak-to-peak)
0.1
V/ns
tSLCH
tCSS
S Active Setup Time (relative to C)
10
ns
tCHSL
S Not Active Hold Time (relative to C)
10
ns
tDVCH
tDSU
Data In Setup Time
5
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
10
ns
tSHCH
S Not Active Setup Time (relative to C)
10
ns
tSHSL
tCSH
S Deselect Time
100
ns
tSHQZ
(2)
tDIS
Output Disable Time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold Time
0
ns
tTHSL
Top Sector Lock Setup Time
50
ns
tSHTL
Top Sector Lock Hold Time
100
ns
tDP
(2)
S to Deep Power-down
3
µs
tRDP
(2)
S High to Standby Power mode
30
µs
tPW
(3)
Page Write Cycle Time (256 bytes)
11
25
ms
Page Write Cycle Time (n bytes)
10.2+
n*0.8/256
tPP
(3)
Page Program Cycle Time (256 bytes)
1.2
5ms
Page Program Cycle Time (n bytes)
0.4+
n*0.8/256
tPE
Page Erase Cycle Time
10
20
ms
tSE
Sector Erase Cycle Time
1
5
s
1.
tCH + tCL must be greater than or equal to 1/ fC
2.
Value guaranteed by characterization, not 100% tested in production.
3.
When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes. (1
≤n ≤256)



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