IXYS reserves the right to change limits, test conditions, and dimensions.

IXGQ150N33TCD1 IXGA150N33TC

IXGQ150N33TC

Reverse Diode

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

V

F

I

F = 20A, VGE = 0V

2.0

V

R

thJC

2.5 ºC/W

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

g

fs

I

C

= 75A, V

CE = 10V, Note 1

65

103

S

C

ies

4270

pF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

308

pF

C

res

49

pF

Q

g

118

nC

Q

ge

I

C = 75A, VGE = 15V, VCE = 0.5 • VCES

25

nC

Q

gc

25

nC

t

d(on)

17

ns

t

ri

29

ns

t

d(off)

42

ns

t

fi

54

ns

t

d(on)

17

ns

t

ri

25

ns

t

d(off)

59

ns

t

fi

73

ns

R

thJC

0.42 °C/W

R

thCH

TO-3P

0.25

°C/W

Resistive load, T

J = 25°

°°°°C

I

C = 75A, VGE = 15V

V

CE = 240V, RG = Roff = 3.3Ω

Resistive load, T

J = 125°

°°°°C

I

C = 75A, VGE = 15V

V

CE = 240V, RG = Roff = 3.3Ω

TO-263 (IXGA) Outline

TO-3P (IXGQ) Outline

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain