STL90N10F7 datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 250 µA

100

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 100 V

µA

VGS = 0 V, VDS = 100 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

3.5

4.5

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 8 A

mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0 V

3100

4030

Coss

Output capacitance

700

910

Crss

Reverse transfer capacitance

Total gate charge

VDD = 50 V, ID = 16 A, VGS = 10 V

(see Figure 13. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 8 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for resistive

load switching times and

Figure 17. Switching time waveform)

Rise time

td(off)

Turn-off-delay time

Fall time

Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD (1)

Forward on voltage

VGS = 0 V, ISD = 16 A

1.1

trr

Reverse recovery time

ISD = 16 A, di/dt = 100 A/µs,

VDD = 80 V, TJ = 150 °C

(see Figure 14. Test circuit for inductive

load switching and diode recovery times)

Qrr

Reverse recovery charge

125

IRRM

Reverse recovery current

3.6

1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STL90N10F7

Electrical characteristics

DS9621 - Rev 7

page 3/16

STL90N10F7 Datasheet(PDF) 3 Page - STMicroelectronics

STL90N10F7 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL