TMF8901F datasheet(1/5 Pages) AUK

Part #	TMF8901F

Description	Si RF LDMOS Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AUK [AUK corp]

Direct Link	https:www.auk.co.kr

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1 / 5 page

□ Features

- Power gain

G

P = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz

- Output power

P

OUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz

- Drain efficiency

η

D = 60 % (typ.)

□ Applications

- VHF and UHF wide band amplifier

SOT-89

□ Absolute Maximum Ratings (T

A = 25 ℃)

Pin Configuration

1. Gate

2. Source

3. Drain

4. Source

Unit in mm

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

150

℃

W

Unit

VDS

13.0

V

Parameter

Symbol

Ptot

3

Ratings

℃

Tstg

-65 ~ 150

V

ID

1.2

A

VGS

4.0

Tch

4

□ Marking

8901

1

2

3

4

TMF8901F

Si RF LDMOS Transistor

Semiconductor

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