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PCR606J Datasheet(PDF) 2 Page - Kcd Korea Semiconductor

Part # PCR606J
Description  Sensitive Gate Silicon Controlled Rectifiers
PDF  5 Pages
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Manufacturer  KCD [Kcd Korea Semiconductor]
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Logo KCD - Kcd Korea Semiconductor

PCR606J Datasheet(HTML) 2 Page - Kcd Korea Semiconductor

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Electrical Characteristics ( T
C = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C
─
─
─
─
10
200
㎂
VTM
Peak On-State Voltage (1)
( ITM = 1 A, Peak )
─
1.2
1.7
V
IGT
Gate Trigger Current (2)
VAK = 6 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
─
─
─
─
200
500
㎂
VGT
Gate Trigger Voltage (2)
VD = 7 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
─
─
─
─
0.8
1.2
V
VGD
Non-Trigger Gate Voltage (1)
VAK = 12 V, RL=100 Ω
TC = 125 °C
0.2
──
V
dv/dt
Critical Rate of Rise Off-State
Voltage
VD = 0.67 VDRM ,
Exponential waveform,
RGK = 1000 Ω
TJ=125°C
500
800
─
V/㎲
di/dt
Critical Rate of Rise On-State
Current
ITM = 2A ; Ig = 10mA
──
50
A/㎲
IH
Holding Current
VAK = 12 V, Gate Open
Initiating Curent = 50mA
TC = 25 °C
TC = - 40 °C
─
─
2
─
5.0
10
mA
Rth(j-c)
Thermal Impedance
Junction to case
──
60
°C/W
Rth(j-a)
Thermal Impedance
Junction to Ambient
──
150
°C/W
P
CR606J
2/5
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
Wed: http://www.kcd.net.cn
Email:kcd@kcd.net.cn



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