DS30934 Rev. 2 - 2

2 of 4

DMN2004WK

www.diodes.com

Electrical Characteristics

°C unless otherwise specified

Notes:

5. Short duration test pulse used to minimize self-heating effect.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

¾¾

V

mA

Zero Gate Voltage Drain Current

¾¾

1

mA

Gate-Source Leakage

¾¾

±1

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

¾

1.0

V

mA

Static Drain-Source On-Resistance

¾

0.4

0.5

0.7

0.55

0.70

0.9

W

Forward Transfer Admittance

200

¾¾

ms

Diode Forward Voltage (Note 5)

0.5

¾

1.4

V

DYNAMIC CHARACTERISTICS

Input Capacitance

¾¾

150

pF

f = 1.0MHz

Output Capacitance

¾¾

25

pF

Reverse Transfer Capacitance

¾¾

20

pF

0

0

12

3

4

5

V

DRAIN-SOURCE VOLTAGE (V)

Fig.1 Typical Output Characteristics

0.3

0.6

0.9

V

= 1.2V

GS

V

= 1.8V

GS

V

= 2.0V

GS

V

= 2.2V

GS

V= 1.4V

GS

V

= 1.6V

GS

V

, GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current

vs. Source-Drain Voltage

100

0

1000

200

300

400

500

600

700

800

900

0.4

0.8

1.2

1.6

2

V

= 10V

Pulsed

DS

T = 150 C

A

°

T= -55 C

A

°

T= 5 C

A

8

°

T= 25 C

A

°

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

ch

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

-75

-50

-25

025

50

75

100

125

150

V= 10V

I= 1mA

Pulsed

DS

D

0.1

I

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

D,

1

0.2

0.4

0.6

0.8

1.0

V

= 10V

Pulsed

GS

T= 150 C

A

°

T= -55 C

A

°

T= -25 C

A

°

T= 0 C

A

°

T= 25 C

A

°

T= 125 C

A

°

T= 85 C

A

°