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LTC4446 Datasheet(PDF) 7 Page - Analog Devices

Part # LTC4446
Description  100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch
PDF  19 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4446 Datasheet(HTML) 7 Page - Analog Devices

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Data Sheet
LT8418
analog.com
Rev 0
7 of 19
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
12-Ball WLCSP Package
Package Size: 1.67mm x 1.67mm, Ball Diameter: 0.26mm, Ball Pitch Size: 0.4mm
Figure 3. Pin Diagram
Pin Descriptions
Table 4. Pin Descriptions
PIN
NAME
DESCRIPTION
A1
BGN
Pull-down branch in bottom side split gate driver output. Adding a resistor from BGN to GaN
FET’s gate can program the turn-off strength of the bottom side GaN FET.
A2
GND
Ground. Connect this pin to the source of the bottom side GaN FET with low inductance and
resistance.
A3, C41
VCC
Power supply for the internal control circuitry and gate drivers. Locally bypassing this pin to
ground with a minimum 4.7µF ceramic capacitor.
A4
INB
PWM input to control bottom-side gate driver. INB is TTL input logic compatible, with a default
200 kΩ pull-down resistance internally. Leave it open or tie it to ground when it is not used.
B1
BGP
Pull-up branch in bottom side split gate driver output. Adding a resistor from BGP to GaN FET’s
gate can program the turn-on strength of the bottom side GaN FET.
B4
INT
PWM input to control top-side gate driver. INT is TTL input logic compatible, with a default 200
kΩ pull-down resistance internally. Leave it open or tie it to ground when it is not used. The
minimum input pulse width for INT is 11ns.
C1, D41
SW
Switch Node. Connect SW to the source of the top synchronous GaN FET and the bottom
terminal of the bootstrap capacitor with low inductance and resistance.
D1
TGN
Pull-down branch in top side split gate driver output. Adding a resistor from TGN to the GaN
FET’s gate can program the turn-off strength of the top side GaN FET.
D2
TGP
Pull-up branch in top side split gate driver output. Adding a resistor from TGP to the GaN FET’s
gate can program the turn-on strength of the top side GaN FET.
D3
BST
Bootstrap Floating Driver Supply. The BST pin has an on-die bootstrap switch from the VCC, and
an external bootstrap capacitor to the SW pin can be used to provide a stable and well-
balanced bootstrap voltage for the top side gate driver. Locally bypass this pin to SW with a
minimum 100nF ceramic capacitor.
1
A3 and C4 are internally connected. C1 and D4 are internally connected.
BGN GND
VCC
INB
1
2
3
4
BGP
INT
SW
VCC
TGN
TGP
BST
SW
A
B
C
D
LT8418
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