PPC5001T datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Mar 03

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistor

PPC5001T

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tmb = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj =75 °C

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

VCB = 24 V; IE =0

−−

100

µA

IEBO

emitter cut-off current

VEB = 1.5 V; IC =0

−−

200

V(BR)CBO

collector-base breakdown voltage

IC = 500 µA; IE =0

−−

V(BR)CER

collector-emitter breakdown voltage

IC = 2.5 mA; RBE =70 Ω

−−

Ccb

collector-base capacitance

VCB = 18 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

−

1.4

−

Cce

collector-emitter capacitance

VCE = 18 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

−

0.9

−

Ceb

emitter-base capacitance

VCB = 10 V; VEB =1V;

IC =IE = 0; f = 1 MHz

−

5.5

−

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