1997 Mar 03

2

Philips Semiconductors

Product specification

NPN microwave power transistor

PPC5001T

FEATURES

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

APPLICATIONS

Intended for use in common-collector oscillator circuits in

military and professional applications up to 5 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a SOT447A metal ceramic flange package.

PINNING - SOT447A

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline and symbol.

Marking code: 395

handbook, halfpage

e

c

b

MAM331

Side view

3

2

1

QUICK REFERENCE DATA

MODE OF OPERATION

f

(GHz)

(V)

(mA)

(mW)

Class A (CW)

5

20

200

450