33291 datasheet(22/26 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33291

FUNCTIONAL DESCRIPTION

The total power dissipation available is dependent on the

number of outputs enabled at any one time. At 25°C the

RDS(ON) in 450 mΩ with a coefficient of 6500 ppm/°C. For the

junction temperature to remain below 150°C, the maximum

available power dissipation must decrease as the ambient

temperature increases. Figure 23 depicts the per output limit

of current at ambient temperatures necessary when one,

four, or eight outputs are enable ON. Figure 25 illustrates

how the RDS(ON) output value is affected by junction

temperature.

Figure 22. Thermal Model (Electrical Equivalent)

Junction Temperature Node

VD - TD (C°)

(Volts represent Die Surface Temperature)

IPWR (Steady State or Transient)

(1.0 A = 1.0 W of Device Power Dissipation)

Flag Temperature Node

Ambient Temperature Node

VA = TA (C°)

(1.0 V = 1°C Ambient Temperature)

Cpkg = Cflag + CPC Board

Rpkg = Rleads + RPC Board

Output 0

Output 1

Output 2

Output 6

Output 7

Rd0

Rd1

Rd2

Rd6

Rd7

Cd0

Cd1

Cd2

Cd6

Cd7

Package

Rdx

(

Ω)*

Cdx

(F)*

Rpkg

(

Ω)*

Cpkg

(F)*

24-Lead

7.0

0.002

0.15

Ω = °C/W, F = W s/°C, I

PWR = W, and VA = °C

SOIC

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