FDN359A datasheet(1/5 Pages) EVVOSEMI

Part #	FDN359A

Description	N-Channel 30 V (D-S) MOSFET

PDF	5 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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Absolute Maximum Ratings T

A = 25

oC unless other wise noted

Symbol

Parameter

Ratings

Units

V

DSS

Drain-Source Voltage

30

V

GSS

Gate-Source Voltage

±20

V

I

D

Maximum Drain Current - Continuous

(Note 1a)

2.7

A

- Pulsed

15

P

D

Maximum Power Dissipation

(Note 1a)

0.5

W

(Note 1b)

0.46

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

General Description

This N-Channel

Logic

Level MOSFET is produced

using advanced PowerTrench process that has been

especially tailored to minimize on-state resistance

and yet maintain superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

D

S

G

N-Channel 30 V (D-S) MOSFET

FDN359A

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Rev:2023A2

1

Features

VDS (V) = 27V

RDS(ON)

46m

(VGS = 10V)

RDS(ON)

60m

(VGS = 4.5V)

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FDN359A Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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