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FDS4435BZ Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # FDS4435BZ
Description  -30V P-Channel MOSFET
PDF  7 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDS4435BZ Datasheet(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Figure 7.
0
5
10
15
20
25
30
0
2
4
6
8
10
I
D = -8.8A
VDD = -20V
VDD = -10V
Qg, GATE CHARGE(nC)
VDD = -15V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
30
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4000
Capacitance vs Drain
to Source Voltage
Figure9.
0.01
0.1
1
10
1
10
TJ = 25oC
TJ = 125oC
t
AV, TIME IN AVALANCHE(ms)
30
20
Unclamped Inductive
Switching Capability
Figure 10.
0
5
10
15
20
25
30
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
TJ = 25oC
TJ = 125oC
VDS = 0V
-VGS, GATE TO SOURCE VOLTAGE(V)
Gate Leakage Current vs Gate to
Source Voltage
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
25
50
75
100
125
150
0
2
4
6
8
10
RTJA = 50
o
C/W
VGS = -4.5V
VGS = -10V
T
A
, AMBIENT TEMPERATURE
(
o
C
)
Figure 12.
0.1
1
10
0.01
0.1
1
10
100
100us
SINGLE PULSE
TJ = MAX RATED
RTJA = 125
o
C/W
TA =25oC
THIS AREA IS
LIMITED BY r
DS(on)
80
10s
1ms
10ms
100ms
1s
DC
-VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
Typical CharacteristicsT
J = 25°C unless otherwise noted
FDS4435
-30V P-Channel MOSFET
Rev:2023A2
4



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