 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
FDS4435BZ Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
|
|
|||||||||||||||||||||||||||||
FDS4435BZ Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
|
|
1 / 7 page  General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. MOSFET Maximum RatingsT A = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous TA = 25°C (Note 1a) -8.8 A -Pulsed -50 PD Power Dissipation TA = 25°C (Note 1a) 2.5 W Power Dissipation TA = 25°C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy (Note 4) 24 mJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RTJC Thermal Resistance, Junction to Case 25 °C/W RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50 FDS4435 -30V P-Channel MOSFET Rev:2023A2 1 (VGS = -10V) VDS (V) =-30V ID= -8.8 A RDS(ON) ＜ 20mΩ(VGS=-10V) RDS(ON) ＜ 35 mΩ(VGS=-4.5V) • • • • Features SOP-8 D D D D G S S S 5 6 7 8 4 3 2 1 |
Similar Part No. - FDS4435BZ |
|
Similar Description - FDS4435BZ |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
