Electrical CharacteristicsT

J = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = -250PA, VGS = 0V

-30

V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient

ID = -250PA, referenced to 25°C

-21

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = -24V, VGS = 0V

1

PA

IGSS

Gate to Source Leakage Current

VGS = ±25V, VDS = 0V

±10

PA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250PA

-1

-2.1

-3

V

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = -250PA, referenced to 25°C

6

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = -10V, ID = -8.8A

16

20

m

:

VGS = -4.5V, ID = -6.7A

26

35

gFS

Forward Transconductance

VDS = -5V, ID = -8.8A

24

S

Ciss

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1MHz

1385

1845

pF

Coss

Output Capacitance

275

365

pF

Crss

Reverse Transfer Capacitance

230

345

pF

Rg

Gate Resistance

f = 1MHz

4.5

:

td(on)

Turn-On Delay Time

VDD = -15V, ID = -8.8A,

VGS = -10V, RGEN = 6:

10

20

ns

tr

Rise Time

612

ns

td(off)

Turn-Off Delay Time

30

48

ns

tf

Fall Time

12

22

ns

Qg

Total Gate Charge

VGS = 0V to -10V

VDD = -15V,

ID = -8.8A

28

40

nC

Qg

Total Gate Charge

VGS = 0V to -5V

16

23

nC

Qgs

Gate to Source Charge

5.2

nC

Qgd

Gate to Drain “Miller” Charge

7.4

nC

VSD

Source to Drain Diode Forward Voltage

VGS = 0V, IS = -8.8A

(Note 2)

-0.9

-1.2

V

trr

Reverse Recovery Time

IF = -8.8A, di/dt = 100A/

Ps

29

44

ns

Qrr

Reverse Recovery Charge

23

35

nC

NOTES:

1. RTJA is determined with the device mounted on a 1in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 30

0Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

a. 50°C/W when mounted on

a 1 in2 pad of 2 oz copper.

b. 125°C/W when mounted on

a minimum pad of 2 oz copper.

FDS4435

-30V P-Channel MOSFET

Rev:2023A2

2