Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).

c. ISD  -6.5 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-200

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at -10 V

TC = 25 °C

ID

-3.6

A

TC = 100 °C

-2.5

Pulsed Drain Current a

IDM

-15

Linear Derating Factor

0.59

W/°C

Linear Derating Factor (PCB mount) e

0.025

Single Pulse Avalanche Energy b

EAS

500

mJ

Avalanche Current a

IAR

-6.4

A

Repetitive Avalanche Energy a

EAR

7.4

mJ

Maximum Power Dissipation

TC = 25 °C

PD

74

W

Maximum Power Dissipation (PCB mount) e

TA = 25 °C

3.0

Peak Diode Recovery dV/dt c

dV/dt

-5.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Soldering Recommendations (Peak temperature) d

for 10 s

300

P-channel Enhancement Mode Power MOSFET

Features

 VDS=

-2 0V, ID= -

A

RDS(ON) <

0.10Ω @ VGS = -10V

RDS(ON) <

0.12Ω @ VGS = -4.5V

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General Features

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Pin Assignment

Schematic Diagram

TO-252-2L Top View

v1.0

FQD7P20TM