Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Maximum Junction-to-Ambient



(PCB mount) a

RthJA

-40

Maximum Junction-to-Case (Drain)

RthJC

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = -250 μA

-200

-

-

V

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = -1 mA

-

-0.24

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-2.0

-

-4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -200 V, VGS = 0 V

-

-

- 100

μA

VDS = -160 V, VGS = 0 V, TJ = 125 °C

-

-

-500

Drain-Source On-State Resistance

RDS(on)

VGS = -10 V

ID = -3.0 A b

-

1.00

-



Forward Transconductance

gfs

VDS = -50 V, ID = -3.0 A b

2.8

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = -25 V,

f = 1.0 MHz, see fig. 5

-

700

-

pF

Output Capacitance

Coss

-

200

-

Reverse Transfer Capacitance

Crss

-40

-

Total Gate Charge

Qg

VGS = -10 V

ID = -3.5A, V DS = -160 V,

see fig. 6 and 13 b

--

29

nC

Gate-Source Charge

Qgs

--

5.4

Gate-Drain Charge

Qgd

--

15

Turn-On Delay Time

td(on)

VDD = -100 V, ID = -3.5A,

Rg = 12 , RD = 15 , see fig. 10 b

-12

-

ns

Rise Time

tr

-27

-

Turn-Off Delay Time

td(off)

-28

-

Fall Time

tf

-24

-

Internal Drain Inductance

LD

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

LS

-7.5

-

Gate Input Resistance

Rg

f = 1 MHz, open drain

0.6

-

3.7



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the



integral reverse



p - n junction diode

--

-6.5

A

Pulsed Diode Forward Current a

ISM

--

-26

Body Diode Voltage

VSD

TJ = 25 °C, IS = -3.5A, V GS = 0 V b

--

-6.5

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs b

-

200

300

ns

Body Diode Reverse Recovery Charge

Qrr

-1.9

2.9

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G

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