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SA571 Datasheet(PDF) 8 Page - NXP Semiconductors |
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SA571 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 11 page ![]() Philips Semiconductors Product specification SA571 Compandor 1997 Aug 14 8 VCA GAIN (0dB) +20 0 –20 –40 –60 –80 –100 –40 –20 0 MAXIMUM SIGNAL LEVEL NOISE IN 20kHz BW 90dB 110dB SR00690 Figure 16. Dynamic Range Control signal feedthrough is generated in the gain cell by imperfect device matching and mismatches in the current sources, I1 and I2. When no input signal is present, changing IG will cause a small output signal. The distortion trim is effective in nulling out any control signal feedthrough, but in general, the null for minimum feedthrough will be different than the null in distortion. The control signal feedthrough can be trimmed independently of distortion by tying a current source to the ∆G input pin. This effectively trims I1. Figure 17 shows such a trim network. R-SELECT FOR 3.6V 470k TO PIN 3 OR 14 100k VCC SR00691 Figure 17. Control Signal Feedthrough OPERATIONAL AMPLIFIER The main op amp shown in the chip block diagram is equivalent to a 741 with a 1MHz bandwidth. Figure 18 shows the basic circuit. Split collectors are used in the input pair to reduce gM, so that a small compensation capacitor of just 10pF may be used. The output stage, although capable of output currents in excess of 20mA, is biased for a low quiescent current to conserve power. When driving heavy loads, this leads to a small amount of crossover distortion. Q1 Q2 Q4 Q3 I1 I2 Q6 D1 D2 Q2 CC +IN –IN OUT SR00692 Figure 18. Operational Amplifier RESISTORS Inspection of the gain equations in Figures 7 and 8 will show that the basic compressor and expander circuit gains may be set entirely by resistor ratios and the internal voltage reference. Thus, any form of resistors that match well would suffice for these simple hook-ups, and absolute accuracy and temperature coefficient would be of no importance. However, as one starts to modify the gain equation with external resistors, the internal resistor accuracy and tempco become very significant. Figure 19 shows the effects of temperature on the diffused resistors which are normally used in integrated circuits, and the ion-implanted resistors which are used in this circuit. Over the critical 0 °C to +70°C temperature range, there is a 10-to-1 improve- ment in drift from a 5% change for the diffused resistors, to a 0.5% change for the implemented resistors. The implanted resistors have another advantage in that they can be made the size of the diffused resistors due to the higher resistivity. This saves a significant amount of chip area. 1% ERROR TEMPERATURE 1.15 1.10 1.05 1.00 .95 –40 0 40 80 120 LOW TC IMPLANTED RESISTOR BAND 1k Ω / 140 Ω / DIFFUSED RESISTOR SR00693 Figure 19. Resistance vs Temperature |
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