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NE571 Datasheet(PDF) 7 Page - NXP Semiconductors |
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NE571 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 11 page ![]() Philips Semiconductors Product specification SA571 Compandor 1997 Aug 14 7 0 3 10k 1MEG INPUT = 0dBm –20dBm –40dBm FREQUENCY (Hz) SR00686 Figure 12. Rectifier Frequency Response vs Input Level VARIABLE GAIN CELL Figure 13 is a diagram of the variable gain cell. This is a linearized two-quadrant transconductance multiplier. Q1, Q2 and the op amp provide a predistorted drive signal for the gain control pair, Q3 and Q4. The gain is controlled by IG and a current mirror provides the output current. The op amp maintains the base and collector of Q1 at ground potential (VREF) by controlling the base of Q2. The input current IIN (=VIN/R2) is thus forced to flow through Q1 along with the current I1, so IC1=I1+IIN. Since I2 has been set at twice the value of I1, the current through Q2 is: I2-(I1+IIN)=I1-IIN=IC2. The op amp has thus forced a linear current swing between Q1 and Q2 by providing the proper drive to the base of Q2. This drive signal will be linear for small signals, but very non-linear for large signals, since it is compensating for the non-linearity of the differential pair, Q1 and Q2, under large signal conditions. Q1 Q2 Q3 Q4 I OUT + I G I 1 I IN + I G V IN I 2 R 2 NOTE: I2 (= 2I1) 280 µA IG IIN VIN R2 20k I1 140 µA V+ V– SR00687 Figure 13. Simplified ∆G Cell Schematic The key to the circuit is that this same predistorted drive signal is applied to the gain control pair, Q3 and Q4. When two differential pairs of transistors have the same signal applied, their collector current ratios will be identical regardless of the magnitude of the currents. This gives us: I C1 I C2 + I C4 I C3 + I 1 ) IIN I 1 * IIN plus the relationships IG=IC3+IC4 and IOUT=IC4-IC3 will yield the multiplier transfer function, I OUT + I G I 1 I IN + V IN R 2 I G I 1 This equation is linear and temperature-insensitive, but it assumes ideal transistors. 4 3 2 1 .34 –6 0 +6 4mV 3mV 2mV 1mV INPUT LEVEL (dBm) VOS = 5mV SR00688 Figure 14. ∆G Cell Distortion vs Offset Voltage If the transistors are not perfectly matched, a parabolic, non-linearity is generated, which results in second harmonic distortion. Figure 14 gives an indication of the magnitude of the distortion caused by a given input level and offset voltage. The distortion is linearly proportional to the magnitude of the offset and the input level. Saturation of the gain cell occurs at a +8dBm level. At a nominal operating level of 0dBm, a 1mV offset will yield 0.34% of second harmonic distortion. Most circuits are somewhat better than this, which means our overall offsets are typically about mV. The distortion is not affected by the magnitude of the gain control current, and it does not increase as the gain is changed. This second harmonic distortion could be eliminated by making perfect transistors, but since that would be difficult, we have had to resort to other methods. A trim pin has been provided to allow trimming of the internal offsets to zero, which effectively eliminated second harmonic distortion. Figure 15 shows the simple trim network required. Figure 16 shows the noise performance of the ∆G cell. The maximum output level before clipping occurs in the gain cell is plotted along with the output noise in a 20kHz bandwidth. Note that the noise drops as the gain is reduced for the first 20dB of gain reduction. At high gains, the signal to noise ratio is 90dB, and the total dynamic range from maximum signal to minimum noise is 110dB. 3.6V VCC R 20k 6.2k To THD Trim ≈200pF SR00689 Figure 15. THD Trim Network |
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