2 of 26
RF3854
Rev A1 DS070313
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to 3.6
V
Storage Temperature
-40 to +150
°C
Operating Ambient Temperature
-40 to +85
°C
Input Voltage, any pin
-0.5 to +3.6
V
Input Power, any pin
+5
dBm
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Output Performance with Modulated Baseband Inputs
Low Band EDGE 8PSK Mode (GSM850/GSM900)
Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control
Settings)
Output Power
VCC=2.7V, T=+25°C
Maximum Output Power with 8PSK
Modulated Signal*
Maximum VGC
0
+2.5
dBm
While meeting spectral mask
Minimum VGC
-39
-37
dBm
While meeting spectral mask
Gain Range
42
dB
Difference between output power at GC=2.0V
and GC=0.2V.
Out-of-Band Emission
Spectrum Emission Mask*
Frequency Spacing
200kHz
-36
TBD
dBc
30kHz BW
250kHz
-43
TBD
dBc
30kHz BW
400kHz
-67
TBD
dBc
30kHz BW
600kHz to 1800kHz
-73
dBc
30kHz BW
1800kHz to 3000kHz
-73
dBc
100kHz BW
3000kHz to 6000kHz
-73
dBc
100kHz BW
>6000kHz
-75
dBc
100kHz BW
Error Vector Magnitude
8PSK Modulation
RMS*
2
3
%
Origin Offset*
-40
-34
dB
Peak*
4
9
%
Output Noise
At FC±20MHz*
Relative Noise at:
Maximum Gain
-156
dBc/Hz
GC=2.0V, IQ=1.2VP-P 8PSK
-152
dBc/Hz
GC=2.0V to 1.4V
Absolute Noise at:
Maximum Gain
-156
dBm
GC=2.0V, IQ=0VP-P
All Gain Settings
-154
dBm
IQ=1.2VP-P 8PSK
* Not tested in Production
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
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