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S71PL129JC0 Datasheet(PDF) 115 Page - SPANSION |
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S71PL129JC0 Datasheet(HTML) 115 Page - SPANSION |
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115 / 153 page ![]() October 28, 2005 S71PL129Jxx_00_A8 S71PL129JC0/S71PL129JB0/S71PL129JA0 113 Advance Informatio n freshed. The data in the remainder of the array will be lost. The PASR operation mode is only available during standby time (ZZ# low) and once ZZ# is returned high, the device resumes full array refresh. All future PASR cycles will use the contents of the Mode Register that has been previously set. To change the ad- dress space of the PASR mode, the Mode Register must be reset using the previously defined procedures. For PASR to be activated, the register bit, A4 must be set to a one (1) value, “PASR Enabled”. If this is the case, PASR will be acti- vated 10 µs after ZZ# is brought low. If the A4 register bit is set equal to zero (0), PASR will not be activated. Temperature Compensated Refresh (for 64Mb) In this mode of operation, the internal refresh rate can be optimized for the op- eration temperature used and this can then lower standby current. The DRAM array in the PSRAM must be refreshed internally on a regular basis. At higher temperatures, the DRAM cell must be refreshed more often than at lower tem- peratures. By setting the temperature of operation in the Mode Register, this refresh rate can be optimized to yield the lowest standby current at the given op- erating temperature. There are four different temperature settings that can be programmed in to the PSRAM. These are defined in Figure 39. Deep Sleep Mode In this mode of operation, the internal refresh is turned off and all data integrity of the array is lost. Deep Sleep is entered by bringing ZZ# low with the A4 reg- ister bit set to a zero (0), “Deep Sleep Enabled”. If this is the case, Deep Sleep will be entered 10 µs after ZZ# is brought low. The device will remain in this mode as long as ZZ# remains low. If the A4 register bit is set equal to one (1), Deep Sleep will not be activated. Reduced Memory Size (for 32M and 16M) In this mode of operation, the 32Mb PSRAM can be operated as a 8Mb or 16Mb device. The mode and array size are determined by the settings in the VA register. The VA register is set according to the following timings and the bit settings in the table “Address Patterns for RMS”. The RMS mode is enabled at the time of ZZ transitioning high and the mode remains active until the register is updated. To return to the full 32Mb address space, the VA register must be reset using the previously defined procedures. While operating in the RMS mode, the unselected portion of the array may not be used. Other Mode Register Settings (for 64M) The Page Mode operation can also be enabled and disabled using the Mode Reg- ister. Register bit A7 controls the operation of Page Mode and setting this bit to a one (1), enables Page Mode. If the register bit A7 is set to a zero (0), Page Mode operation is disabled. |
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