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PIC16CR74E/P Datasheet(PDF) 122 Page - Microchip Technology

Part # PIC16CR74E/P
Description  28/40-Pin, 8-Bit CMOS ROM Microcontrollers
PDF  172 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC16CR74E/P Datasheet(HTML) 122 Page - Microchip Technology

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PIC16CR7X
DS21993C-page 120
© 2007 Microchip Technology Inc.
IDD
Supply Current (Notes 2, 5)
D010
D010A
PIC16CR7X
—
—
0.5
20
2
48
mA
μA
XT, RC osc configuration
FOSC = 4 MHz, VDD = 3.0V (Note 4)
LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
D010
D013
PIC16CR7X
—
—
1.1
6.3
4
15
mA
mA
XT, RC osc configuration
FOSC = 4 MHz, VDD = 5.5V (Note 4)
HS osc configuration
FOSC = 20 MHz, VDD = 5.5V
D015*
ΔIBOR Brown-out
Reset Current (Note 6)
—30
200
μA BOR enabled, VDD = 5.0V
D020
IPD
Power-down Current (Notes 3, 5)
D021
PIC16CR7X
—
—
2.0
0.1
30
5
μA
μA
VDD = 3.0V, WDT enabled, -40
°C to +85°C
VDD = 3.0V, WDT disabled, -40
°C to +85°C
D020
D021
D021A
PIC16CR7X
—
—
—
—
5
0.1
10.5
1.5
42
19
57
42
μA
μA
μA
μA
VDD = 4.0V, WDT enabled, -40
°C to +85°C
VDD = 4.0V, WDT disabled, -40
°C to +85°C
VDD = 4.0V, WDT enabled, -40
°C to
+125
°C
VDD = 4.0V, WDT disabled, -40
°C to
+125
°C
D023*
ΔIBOR Brown-out
Reset Current (Note 6)
—30
200
μA BOR enabled, VDD = 5.0V
15.1
DC Characteristics: PIC16CR73/74/76/77 (Industrial, Extended) (Continued)
PIC16CR73/74/76/77
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ† Max Units
Conditions
Legend: Shading of rows is to assist in readability of of the table.
*
These parameters are characterized but not tested.
†
Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
This is the limit to which VDD can be lowered without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature also have
an impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impendance state and tied to VDD and VSS.
4:
For RC osc configuration, current through REXT is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2REXT (mA) with REXT in kOhm.
5:
Timer1 oscillator (when enabled) adds approximately 20
μA to the specification. This value is from
characterization and is for design guidance only. This is not tested.
6:
The
Δ current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
7:
When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.



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