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PIC12F635-I/ST Datasheet(PDF) 176 Page - Microchip Technology

Part # PIC12F635-I/ST
Description  8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology
PDF  234 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC12F635-I/ST Datasheet(HTML) 176 Page - Microchip Technology

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PIC12F635/PIC16F636/639
DS41232D-page 174
© 2007 Microchip Technology Inc.
15.6
DC Characteristics: PIC16F639-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
Supply Voltage
2.0V
≤ VDD ≤ 3.6V
Param
No.
Sym
Device Characteristics
Min
Typ†
Max
Units
Conditions
VDD
Note
D010
IDD
Supply Current(1,2,3)
—11
16
μA2.0
FOSC = 32.768 kHz
LP Oscillator mode
—18
28
μA3.0
D011
—
140
240
μA2.0
FOSC = 1 MHz
XT Oscillator mode
—
220
380
μA3.0
D012
—
260
360
μA2.0
FOSC = 4 MHz
XT Oscillator mode
—
420
650
μA3.0
D013
—
130
220
μA2.0
FOSC = 1 MHz
EC Oscillator mode
—
215
360
μA3.0
D014
—
220
340
μA2.0
FOSC = 4 MHz
EC Oscillator mode
—
375
550
μA3.0
D015
—
8
20
μA2.0
FOSC = 31 kHz
LFINTOSC mode
—16
40
μA3.0
D016
—
340
450
μA2.0
FOSC = 4 MHz
HFINTOSC mode
—
500
700
μA3.0
D017
—
230
400
μA2.0
FOSC = 4 MHz
EXTRC mode
—
400
680
μA3.0
D020
IPD
Power-down Base Current(4)
—
0.15
1.2
μA
2.0
WDT, BOR, Comparators,
VREF and T1OSC disabled
(excludes AFE)
—
0.20
1.5
μA3.0
D021
IWDT
—
1.2
2.2
μA2.0
WDT Current(1)
—2.0
4.0
μA3.0
D022A
IBOR
—
42
60
μA
3.0
BOR Current(1)
D022B
ILVD
—
22
28
μA
2.0
PLVD Current
—25
35
μA3.0
D023
ICMP
—
32
45
μA
2.0
Comparator Current(1)
—60
78
μA3.0
D024A
IVREFHS
—30
36
μA2.0
CVREF Current(1)
(high-range)
—45
55
μA3.0
D024B
IVREFLS
—39
47
μA2.0
CVREF Current(1)
(low-range)
—59
72
μA3.0
D025
IT1OSC
—
4.5
7.0
μA
2.0
T1OSC Current(1)
—5.0
8.0
μA3.0
D026
IACT
Active Current of AFE only
(receiving signal)
1 LC Input Channel Signal
3 LC Input Channel Signals
—
—
10
13
—
18
μA
μA
3.6
3.6
CS = VDD; Input = Continuous
Wave (CW);
Amplitude = 300 mVPP.
All channels enabled.
D027
ISTDBY
Standby Current of AFE only
(not receiving signal)
1 LC Input Channel Enabled
2 LC Input Channels Enabled
3 LC Input Channels Enabled
—
—
—
3
4
5
5
6
7
μΑ
μA
μA
3.6
3.6
3.6
CS = VDD; ALERT = VDD
D028
ISLEEP
Sleep Current of AFE only
—
0.2
1
μA3.6
CS = VDD; ALERT = VDD
†
Data in “Typ” column is at 3.0V, 25
°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note
1:
The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins
tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,
oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog
Front-End not included.
3:
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The
peripheral
Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when
calculating total current consumption.
4:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep
mode, with all I/O pins in high-impedance state and tied to VDD.



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