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P4C188-35JM Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

Part # P4C188-35JM
Description  ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
PDF  12 Pages
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C188-35JM Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C188/188L
Page 5 of 12
Document # SRAM112 REV A
12. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is
sampled and not 100% tested.
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED) (9)
AC CHARACTERISTICS - WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Sym.
Parameter
-10
-12
-15
-20
-25
-35
-45
Unit
Min
Min
Min
Min
Min
Min
Min
Max
Max
Max
Max
Max
Max
Max
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
DW
Write Cycle Time
Chip Enable
Time to
End of Write
Address Valid
to End of Write
Address
Set-up Time
Write Pulse
Width
Address Hold
Time from
End of Write
Data Valid to
End of Write
Data Hold
Time
Write Enable
to Output in
High Z
Output Active
from End
of Write
10
7
7
0
8
0
5
0
2
5
12
8
8
0
9
0
6
0
2
6
13
10
10
0
10
0
7
0
2
6
20
13
15
0
13
0
8
0
2
8
25
15
20
0
15
0
10
0
2
35
25
25
0
25
0
15
0
3
15
45
35
35
0
35
0
20
5
3
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10



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