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NT5DS16M16CS Datasheet(PDF) 41 Page - NanoAmp Solutions, Inc. |
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NT5DS16M16CS Datasheet(HTML) 41 Page - NanoAmp Solutions, Inc. |
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41 / 76 page  Write to Precharge: Non-Interrupting (Burst Length = 4) T1 T2 T3 T4 T5 T6 tDQSS (max) NOP NOP NOP NOP Write DI a-b PRE DI a-b = data in for bank a, column b. 3 subsequent elements of data in are applied in the programmed order following DI a-b. A non-interrupted burst is shown. tWR is referenced from the first positive CK edge after the last data in pair. A10 is Low with the Write command (Auto Precharge is disabled). CK CK Command Address DQS DQ DM Don’t Care BA a, COL b BA (a or all) tWR Maximum DQSS T1 T2 T3 T4 T5 T6 NOP NOP NOP NOP Write PRE CK CK Command Address BA a, COL b BA (a or all) tWR Minimum DQSS DI a-b DQS DQ DM tDQSS (min) tRP tRP NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS DOC # 14-02-044 Rev A ECN # 01-1116 The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com 41 NanoAmp Solutions, Inc. |
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