NT5DS16M16CS datasheet(49/76 Pages) NANOAMP

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Truth Table 4: Current State Bank n - Command to Bank m (Different bank)

(Part 1 of 2)

Current State

RAS

CAS

Command

Action

Notes

Any

Deselect

NOP/continue previous operation

1-6

No Operation

NOP/continue previous operation

1-6

Idle

Any Command Otherwise

Allowed to Bank m

1-6

Row Activating,

Active, or

Precharging

Active

Select and activate row

1-6

Read

Select column and start Read burst

1-7

Write

Select column and start Write burst

1-7

Precharge

1-6

Read

(Auto Precharge

Disabled)

Active

Select and activate row

1-6

Read

Select column and start new Read burst

1-7

Precharge

1-6

Write

(Auto Precharge

Disabled)

Active

Select and activate row

1-6

Read

Select column and start Read burst

1-8

Write

Select column and start new Write burst

1-7

Precharge

1-6

1. This table applies when CKE n-1 was high and CKE n is high (see Truth Table 2: Clock Enable (CKE) and after tXSNR / tXSRD has been

met (if the previous state was self refresh).

2. This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands shown are

those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are cov-

ered in the notes below.

3. Current state definitions:

Idle:

The bank has been precharged, and tRP has been met.

Row Active:

A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are

in progress.

Read:

A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.

Write:

A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.

Read with Auto Precharge Enabled: See note 10.

Write with Auto Precharge Enabled: See note 10.

4. Auto Refresh and Mode Register Set commands may only be issued when all banks are idle.

5. A Burst Terminate command cannot be issued to another bank; it applies to the bank represented by the current state only.

6. All states and sequences not shown are illegal or reserved.

7. Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with

Auto Precharge disabled.

8. Requires appropriate DM masking.

9. A Write command may be applied after the completion of data output.

10. The Read with Auto Precharge enabled or Write with Auto Precharge enabled states can each be broken into two parts: the access

period and the precharge period. For Read with Auto Precharge, the precharge period is defined as if the same burst was executed with

Auto Precharge disabled and then followed with the earliest possible Precharge command that still accesses all of the data in the burst.

For Write with Auto Precharge, the precharge period begins when tWR ends, with tWR measured as if Auto Precharge was disabled. The

access period starts with registration of the command and ends where the precharge period (or tRP) begins. During the precharge period

of the Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states, Active, Precharge, Read, and Write commands to

the other bank may be applied; during the access period, only Active and Precharge commands to the other bank may be applied. In

either case, all other related limitations apply (e.g. contention between Read data and Write data must be avoided).

NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT

NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS

DOC # 14-02-044 Rev A ECN # 01-1116

The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com

NanoAmp Solutions, Inc.

NT5DS16M16CS Datasheet(PDF) 49 Page - NanoAmp Solutions, Inc.

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